MS1501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HG RF POWER TRANSISTOR MS1501 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the

PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

PD - 9.1508C IRLMS1503 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 30V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRLMS1503PbF-1 HEXFET Power MOSFET VDS 30 V A 1 6 D D RDS(on) max 0.10 (@V = 10V) GS 2 5 D D RDS(on) max 0.20 (@V = 4.5V) GS 3 4 G S Qg (typical) 6.4 nC Micro6 ID Top View 3.2 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing

OMS150N06FL OMS60L60FL Preliminary Data Sheet OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To Package DESCRIPTION These modules are ideally suited for high d

N-Channel Super Trench Power MOSFET Description The HMS150N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rec

HMS150N06D N-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti