Биполярный транзистор MS1501 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MS1501
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 860 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: M122
MS1501 Datasheet (PDF)
ms1501.pdf
HG RF POWER TRANSISTORMS1501SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the
irlms1503pbf.pdf
PD - 95762IRLMS1503PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 30Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper
irlms1503.pdf
PD - 9.1508CIRLMS1503HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 30V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged
irlms1503pbf-1.pdf
IRLMS1503PbF-1HEXFET Power MOSFETVDS 30 VA1 6D DRDS(on) max 0.10(@V = 10V)GS25DDRDS(on) max 0.20(@V = 4.5V)GS3 4G SQg (typical) 6.4 nCMicro6ID Top View3.2 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout Micro-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturing
oms150n06f.pdf
OMS150N06FL OMS60L60FLPreliminary Data SheetOMS120N10FL OMS50F60FLH-BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 50 To 150 Amp Modules,H-Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To PackageDESCRIPTIONThese modules are ideally suited for high d
hms150n04d.pdf
N-Channel Super Trench Power MOSFET Description The HMS150N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rec
hms150n06d.pdf
HMS150N06DN-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS