MSA1162GT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSA1162GT1G  📄📄 

Código: 62G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT346

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MSA1162GT1G datasheet

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MSA1162GT1G

MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features http //onsemi.com Moisture Sensitivity Level 1 This is a Pb-Free Device COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 BASE EMITTER Emitter-Base Voltage V(BR)EBO 7.0 Vdc Collector Current -

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MSA1162GT1G

MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount http //onsemi.com Features Moisture Sensitivity Level 1 COLLECTOR ESD Rating TBD 3 Pb-Free Packages are Available MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit 2 1 Collector-Base Voltage V(BR)CBO 60 Vdc BASE EMITTER Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V

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