MSG43001 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSG43001  📄📄 

Código: 3N

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 9 V

Tensión colector-emisor (Vce): 6 V

Tensión emisor-base (Veb): 1 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 19000 MHz

Capacitancia de salida (Cc): 0.3 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: ML3N2

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MSG43001 datasheet

 ..1. Size:205K  panasonic
 msg43001.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43001 SiGe HBT type For low-noise RF amplifier Unit mm Features 3 2 Compatible between high breakdown voltage and high cutoff fre- quency 1 0.39+0.01 Low-noise, high-gain amplification 1.00 0.05 -0.03 Suitable for high-density mounting and downsizing of the equip- 0.25 0.05 0.25 0.05

 7.1. Size:202K  panasonic
 msg43002.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43002 SiGe HBT type For low-noise RF amplifier Unit mm Features 3 2 Compatible between high breakdown voltage and high cutoff fre- quency 1 0.39+0.01 Low-noise, high-gain amplification 1.00 0.05 -0.03 Suitable for high-density mounting and downsizing of the equip- 0.25 0.05 0.25 0.05

 7.2. Size:204K  panasonic
 msg43004.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43004 SiGe HBT type For low-noise RF amplifier Unit mm 3 2 Features Compatible between high breakdown voltage and high cut-off frequency 1 Low noise, high-gain amplification 0.39+0.01 1.00 0.05 -0.03 Optimal size reduction and high level integration for ultra-small packages 0.25 0.05 0

 7.3. Size:531K  panasonic
 msg43003.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43003 SiGe HBT type For low-noise RF amplifier Unit mm Features Compatible between high breakdown voltage and high cutoff frequency 3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1 Ultraminiature package 0.6 mm 1.0 mm (hei

MOSTRAR MÁS

Otros transistores... MSD601-R, MSD601-RT1G, MSD602-RT1, MSD602-RT1G, MSG36C42, MSG36D42, MSG36E31, MSG36E41, 2SC2625, MSG43002, MSG43003, MSG43004, MSG430C4, MSG430D4, MT3S106FS, MT3S111, MT3S111P