All Transistors. MSG43001 Datasheet

 

MSG43001 Datasheet and Replacement


   Type Designator: MSG43001
   SMD Transistor Code: 3N
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 9 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 19000 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: ML3N2
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MSG43001 Datasheet (PDF)

 ..1. Size:205K  panasonic
 msg43001.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43001SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

 7.1. Size:202K  panasonic
 msg43002.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

 7.2. Size:204K  panasonic
 msg43004.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0

 7.3. Size:531K  panasonic
 msg43003.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG43003SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1Ultraminiature package 0.6 mm 1.0 mm (hei

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: EMX1FHA | 2SC155 | NPS5910 | CH837UPNGP | MRF1090MB | PBSS4041PX | KT719A

Keywords - MSG43001 transistor datasheet

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