MSG43001 Datasheet. Specs and Replacement

Type Designator: MSG43001  📄📄 

SMD Transistor Code: 3N

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 9 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 19000 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: ML3N2

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MSG43001 datasheet

 ..1. Size:205K  panasonic

 msg43001.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43001 SiGe HBT type For low-noise RF amplifier Unit mm Features 3 2 Compatible between high breakdown voltage and high cutoff fre- quency 1 0.39+0.01 Low-noise, high-gain amplification 1.00 0.05 -0.03 Suitable for high-density mounting and downsizing of the equip- 0.25 0.05 0.25 0.05 ... See More ⇒

 7.1. Size:202K  panasonic

 msg43002.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43002 SiGe HBT type For low-noise RF amplifier Unit mm Features 3 2 Compatible between high breakdown voltage and high cutoff fre- quency 1 0.39+0.01 Low-noise, high-gain amplification 1.00 0.05 -0.03 Suitable for high-density mounting and downsizing of the equip- 0.25 0.05 0.25 0.05 ... See More ⇒

 7.2. Size:204K  panasonic

 msg43004.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43004 SiGe HBT type For low-noise RF amplifier Unit mm 3 2 Features Compatible between high breakdown voltage and high cut-off frequency 1 Low noise, high-gain amplification 0.39+0.01 1.00 0.05 -0.03 Optimal size reduction and high level integration for ultra-small packages 0.25 0.05 0... See More ⇒

 7.3. Size:531K  panasonic

 msg43003.pdf pdf_icon

MSG43001

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43003 SiGe HBT type For low-noise RF amplifier Unit mm Features Compatible between high breakdown voltage and high cutoff frequency 3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1 Ultraminiature package 0.6 mm 1.0 mm (hei... See More ⇒

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Detailed specifications: MSD601-R, MSD601-RT1G, MSD602-RT1, MSD602-RT1G, MSG36C42, MSG36D42, MSG36E31, MSG36E41, 2SC2625, MSG43002, MSG43003, MSG43004, MSG430C4, MSG430D4, MT3S106FS, MT3S111, MT3S111P

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