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MSG43004 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG43004
   Código: 5Y
   Material: SiGe
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 9 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 17000 MHz
   Capacitancia de salida (Cc): 0.6 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: ML3N2
 

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MSG43004 Datasheet (PDF)

 ..1. Size:204K  panasonic
 msg43004.pdf pdf_icon

MSG43004

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0

 7.1. Size:202K  panasonic
 msg43002.pdf pdf_icon

MSG43004

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

 7.2. Size:531K  panasonic
 msg43003.pdf pdf_icon

MSG43004

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG43003SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1Ultraminiature package 0.6 mm 1.0 mm (hei

 7.3. Size:205K  panasonic
 msg43001.pdf pdf_icon

MSG43004

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43001SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB857-B | CHDTA114EEGP

 

 
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