MSG43004 - параметры, поиск аналогов, даташиты транзистора

MSG43004 Datasheet (PDF)

..1. Size:204K panasonic
msg43004.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0

7.1. Size:202K panasonic
msg43002.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

7.2. Size:531K panasonic
msg43003.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG43003SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1Ultraminiature package 0.6 mm 1.0 mm (hei

7.3. Size:205K panasonic
msg43001.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43001SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .