MT3S111P Todos los transistores

 

MT3S111P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MT3S111P
   Código: R5
   Material: SiGe
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 0.6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8000 MHz
   Capacitancia de salida (Cc): 1.6 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT89
 

 Búsqueda de reemplazo de MT3S111P

   - Selección ⓘ de transistores por parámetros

 

MT3S111P Datasheet (PDF)

 ..1. Size:161K  toshiba
 mt3s111p.pdf pdf_icon

MT3S111P

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.

 ..2. Size:163K  toshiba
 mt3s111p .pdf pdf_icon

MT3S111P

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.

 7.1. Size:161K  toshiba
 mt3s111 .pdf pdf_icon

MT3S111P

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T

 7.2. Size:156K  toshiba
 mt3s111tu .pdf pdf_icon

MT3S111P

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC -JEITA -Ab

MOSTRAR MÁS

Otros transistores... MSG43001 , MSG43002 , MSG43003 , MSG43004 , MSG430C4 , MSG430D4 , MT3S106FS , MT3S111 , 2N4401 , MT3S111TU , MT3S113 , MT3S113P , MT3S113TU , MT4S102T , MT4S102U , MT4S300U , MT4S301U .

History: 2SA496Y | ECG29 | 2S111 | 2SC3861 | BRY62 | 2SC3068

 

 
Back to Top

 


 
.