MT3S111P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MT3S111P  📄📄 

Código: R5

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-emisor (Vce): 6 V

Tensión emisor-base (Veb): 0.6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8000 MHz

Capacitancia de salida (Cc): 1.6 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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MT3S111P datasheet

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MT3S111P

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.

 ..2. Size:163K  toshiba
 mt3s111p .pdf pdf_icon

MT3S111P

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.

 7.1. Size:161K  toshiba
 mt3s111 .pdf pdf_icon

MT3S111P

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T

 7.2. Size:156K  toshiba
 mt3s111tu .pdf pdf_icon

MT3S111P

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Ab

MOSTRAR MÁS

Otros transistores... MSG43001, MSG43002, MSG43003, MSG43004, MSG430C4, MSG430D4, MT3S106FS, MT3S111, 2SB817, MT3S111TU, MT3S113, MT3S113P, MT3S113TU, MT4S102T, MT4S102U, MT4S300U, MT4S301U