All Transistors. MT3S111P Datasheet

 

MT3S111P Datasheet and Replacement


   Type Designator: MT3S111P
   SMD Transistor Code: R5
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 0.6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89
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MT3S111P Datasheet (PDF)

 ..1. Size:161K  toshiba
 mt3s111p.pdf pdf_icon

MT3S111P

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.

 ..2. Size:163K  toshiba
 mt3s111p .pdf pdf_icon

MT3S111P

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.

 7.1. Size:161K  toshiba
 mt3s111 .pdf pdf_icon

MT3S111P

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T

 7.2. Size:156K  toshiba
 mt3s111tu .pdf pdf_icon

MT3S111P

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC -JEITA -Ab

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Keywords - MT3S111P transistor datasheet

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