MT3S111P Datasheet, Equivalent, Cross Reference Search
Type Designator: MT3S111P
SMD Transistor Code: R5
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 0.6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
MT3S111P Transistor Equivalent Substitute - Cross-Reference Search
MT3S111P Datasheet (PDF)
mt3s111p.pdf
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.
mt3s111p .pdf
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.
mt3s111 .pdf
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T
mt3s111tu .pdf
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC -JEITA -Ab
mt3s111tu.pdf
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA -
mt3s111.pdf
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
