MT3S113 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MT3S113  📄📄 

Código: R7

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-emisor (Vce): 5.3 V

Tensión emisor-base (Veb): 0.6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 12500 MHz

Capacitancia de salida (Cc): 1.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT23 SOT346

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MT3S113 datasheet

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MT3S113

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)

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 mt3s113 .pdf pdf_icon

MT3S113

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)

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 mt3s113p.pdf pdf_icon

MT3S113

MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF = 1.15dB (typ.) (@ f=1GHz) High Gain S21e 2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC - JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g

 0.2. Size:176K  toshiba
 mt3s113tu.pdf pdf_icon

MT3S113

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3

MOSTRAR MÁS

Otros transistores... MSG43003, MSG43004, MSG430C4, MSG430D4, MT3S106FS, MT3S111, MT3S111P, MT3S111TU, 2SC2655, MT3S113P, MT3S113TU, MT4S102T, MT4S102U, MT4S300U, MT4S301U, MT6L03AE, MT6L04AE