All Transistors. MT3S113 Datasheet

 

MT3S113 Datasheet and Replacement


   Type Designator: MT3S113
   SMD Transistor Code: R7
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Emitter Voltage |Vce|: 5.3 V
   Maximum Emitter-Base Voltage |Veb|: 0.6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 12500 MHz
   Collector Capacitance (Cc): 1.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23 SOT346
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MT3S113 Datasheet (PDF)

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MT3S113

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

 ..2. Size:203K  toshiba
 mt3s113 .pdf pdf_icon

MT3S113

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

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 mt3s113p.pdf pdf_icon

MT3S113

MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC -JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1A Weight : 0.05 g

 0.2. Size:176K  toshiba
 mt3s113tu.pdf pdf_icon

MT3S113

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base2. 2. EmitterR 7 3. 3

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History: SML4009 | EMB3 | SGSIF463 | 3DD128FH3D | 3CK120 | 2SD621 | EMD4DXV6

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