MT3S113 Datasheet. Specs and Replacement

Type Designator: MT3S113  📄📄 

SMD Transistor Code: R7

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Emitter Voltage |Vce|: 5.3 V

Maximum Emitter-Base Voltage |Veb|: 0.6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 12500 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23 SOT346

 MT3S113 Substitution

- BJT ⓘ Cross-Reference Search

 

MT3S113 datasheet

 ..1. Size:201K  toshiba

mt3s113.pdf pdf_icon

MT3S113

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒

 ..2. Size:203K  toshiba

mt3s113 .pdf pdf_icon

MT3S113

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒

 0.1. Size:197K  toshiba

mt3s113p.pdf pdf_icon

MT3S113

MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF = 1.15dB (typ.) (@ f=1GHz) High Gain S21e 2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC - JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g ... See More ⇒

 0.2. Size:176K  toshiba

mt3s113tu.pdf pdf_icon

MT3S113

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3... See More ⇒

Detailed specifications: MSG43003, MSG43004, MSG430C4, MSG430D4, MT3S106FS, MT3S111, MT3S111P, MT3S111TU, 2SC2655, MT3S113P, MT3S113TU, MT4S102T, MT4S102U, MT4S300U, MT4S301U, MT6L03AE, MT6L04AE

Keywords - MT3S113 pdf specs

 MT3S113 cross reference

 MT3S113 equivalent finder

 MT3S113 pdf lookup

 MT3S113 substitution

 MT3S113 replacement