MP4013 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MP4013  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 2000

Encapsulados: 2-25A1A

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MP4013 datasheet

 ..1. Size:126K  toshiba
mp4013.pdf pdf_icon

MP4013

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4013 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T

 ..2. Size:167K  toshiba
mp4013 .pdf pdf_icon

MP4013

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)

 0.1. Size:516K  diodes
dmp4013lfg.pdf pdf_icon

MP4013

DMP4013LFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 13m @ VGS = -10V -10.3A density end products. -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the board area

 0.2. Size:603K  diodes
dmp4013lfgq.pdf pdf_icon

MP4013

DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TA = +25 C 13m @ VGS = -10V -10.3A Density End Products -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the Board

Otros transistores... MT6L04AE, MT6L71FS, MT6L76FS, MT6L77FS, MT6L78FS, MP4005, MP4006, MP4009, 2SD669, MP4015, MP4020, MP4021, MP4024, MP4025, MP4101, MP4104, MP42001