MP4013 Datasheet and Replacement
Type Designator: MP4013
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 8
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 20
pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: 2-25A1A
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MP4013 Datasheet (PDF)
..1. Size:126K toshiba
mp4013.pdf 

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4013 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
..2. Size:167K toshiba
mp4013 .pdf 

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
0.1. Size:516K diodes
dmp4013lfg.pdf 

DMP4013LFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 13m @ VGS = -10V -10.3A density end products. -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the board area
0.2. Size:603K diodes
dmp4013lfgq.pdf 

DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TA = +25C 13m @ VGS = -10V -10.3A Density End Products -40V 18m @ VGS = -4.5V -8.8A Occupies 33% of the Board
9.1. Size:359K 1
dmp4015sps-13.pdf 

DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 11m @ VGS = -10V -17A -40V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 15m @ VGS = -4.5V -14.5A Halogen and
9.2. Size:177K toshiba
mp4015 .pdf 

MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One) MP4015 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
9.3. Size:130K toshiba
mp4015.pdf 

MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4015 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
9.4. Size:363K diodes
dmp4015spsq.pdf 

DMP4015SPSQGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -17.0A Halogen and Antimony Free. Green Device
9.5. Size:270K diodes
dmp4015sssq.pdf 

DMP4015SSSQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -10.1A Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to
9.6. Size:202K diodes
dmp4015sps.pdf 

DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -17.0A " Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for Hig
9.7. Size:224K diodes
dmp4015sk3.pdf 

DMP4015SK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -14.0A Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for High Reliability 15m
9.8. Size:314K diodes
dmp4015sk3q.pdf 

Green DMP4015SK3QP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(on) max TC = +25C Low on-resistance 11m @ VGS = -10V -35A Fast switching speed -40V 15m @ VGS = -4.5V -30A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
9.9. Size:189K diodes
dmp4015sss.pdf 

DMP4015SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) 11m @ VGS = -10V -10.1A -40V Qualified to AEC-Q101 Standards for High Rel
9.10. Size:1482K cn vbsemi
dmp4015sssq.pdf 

DMP4015SSSQwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
9.11. Size:266K inchange semiconductor
dmp4015sk3.pdf 

isc P-Channel MOSFET Transistor DMP4015SK3FEATURESDrain Current I = -35A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
Datasheet: 2SA1803O
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History: MP4021
| MP4005
| 2SC3415S
| 2N3904V
| MJE13005A
| KT805AM
| 2N3881
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