MP42001 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP42001
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.13 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2300 MHz
Capacitancia de salida (Cc): 1.3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: MICRO-X
Búsqueda de reemplazo de MP42001
MP42001 Datasheet (PDF)
mp42001.pdf

Silicon Bipolar Low Noise Microwave Transistors MP42001Case Styles Features Low Noise Figure (.8dB Typical @ 60 MHz) Large Dynamic Range (+25dBm @ 1Db Compression Point) Gold Metalization Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels Low 1/f Noise (1.0dB Typical @ 10 KHz) Description This series o
pmp4201v g y.pdf

PMP4201V; PMP4201G;PMP4201YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN
mp4209.pdf

MP4209 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV in One) MP4209 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : P
mp4208 .pdf

MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2--MOSV in One) MP4208 Industrial Applications High Power High Speed Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching -4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC341-10 | BF254 | 2N1167 | CD15000E | 40519 | SC118 | MPS2222-H
History: BC341-10 | BF254 | 2N1167 | CD15000E | 40519 | SC118 | MPS2222-H



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