MP42141 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon Bipolar Low Noise Microwave Transistors MP42141Case Styles Features Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 dB Typical Gold Metalization Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels ION Implanted arsenic Emitter for Consistent Performance Descr

MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2--MOSV in One) MP4212 Industrial Applications High Power High Speed Switching Applications Unit: mmH-Switch Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25C) Low drain-source ON resistance

MP4210 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV inOne) MP4210 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : PT

MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2--MOSV inOne) MP4211 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT