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BD179G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD179G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO225
 

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BD179G Datasheet (PDF)

 ..1. Size:81K  onsemi
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BD179G

BD179Plastic Medium-PowerNPN Silicon TransistorThis device is designed for use in 5.0 to 10 Watt audio amplifiersand drivers utilizing complementary or quasi complementary circuits.Featureshttp://onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available*POWER TRANSISTORSNPN SILICON80 V

 9.1. Size:106K  motorola
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BD179G

Order this documentMOTOROLAby BD179/DSEMICONDUCTOR TECHNICAL DATABD179BD179-10Plastic Medium Power SiliconNPN Transistor3.0 AMPERES. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizingPOWER TRANSISTORScomplementary or quasi complementary circuits.NPN SILICON DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc

 9.2. Size:251K  st
bd179.pdf pdf_icon

BD179G

BD179NPN power transistorFeatures NPN transistorApplications General purpose switching1Description23The device is manufactured in Planar technology SOT-32with Base Island layout. The resulting transistor (TO-126)shows exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagramTable 1. Device summa

 9.3. Size:37K  fairchild semi
bd175 bd177 bd179.pdf pdf_icon

BD179G

BD175/177/179Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD175 45 V : BD177 60 V : BD179 80 V VCEO Collector-Emitter Voltage : BD175 45 V

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD1172 | BF323-1 | MPQ3762 | PBSS4021PT | BF392W2 | BC817W | HEPS0020

 

 
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