BD179G Datasheet. Equivalente

 ..1. Size:81K  onsemi
 bd179g.pdf

BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http //onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available* POWER TRANSISTORS NPN SILICON 80 V

 9.1. Size:106K  motorola
 bd179-10.pdf

 9.2. Size:251K  st
 bd179.pdf

BD179 NPN power transistor Features NPN transistor Applications General purpose switching 1 Description 2 3 The device is manufactured in Planar technology SOT-32 with Base Island layout. The resulting transistor (TO-126) shows exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagram Table 1. Device summa

 9.3. Size:37K  fairchild semi
 bd175 bd177 bd179.pdf

BD175/177/179 Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD175 45 V BD177 60 V BD179 80 V VCEO Collector-Emitter Voltage BD175 45 V

 9.4. Size:80K  onsemi
 bd179.pdf

BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http //onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available* POWER TRANSISTORS NPN SILICON 80 V

 9.5. Size:853K  onsemi
 bd175 bd177 bd179.pdf

 9.6. Size:217K  cdil
 bd175 bd176 bd177 bd178 bd179 bd180.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE

 9.7. Size:123K  shantou-huashan
 hsbd179.pdf

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

 9.8. Size:211K  inchange semiconductor
 bd179.pdf

isc Silicon NPN Power Transistor BD179 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 80V(Min) CEO(SUS) Complement to type BD180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T

 9.9. Size:123K  inchange semiconductor
 bd175 bd177 bd179.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 DESCRIPTION With TO-126 package Complement to type BD176/178 /180 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CON