BD179Plastic Medium-PowerNPN Silicon TransistorThis device is designed for use in 5.0 to 10 Watt audio amplifiersand drivers utilizing complementary or quasi complementary circuits.Featureshttp://onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available*POWER TRANSISTORSNPN SILICON80 V

Order this documentMOTOROLAby BD179/DSEMICONDUCTOR TECHNICAL DATABD179BD179-10Plastic Medium Power SiliconNPN Transistor3.0 AMPERES. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizingPOWER TRANSISTORScomplementary or quasi complementary circuits.NPN SILICON DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc

BD179NPN power transistorFeatures NPN transistorApplications General purpose switching1Description23The device is manufactured in Planar technology SOT-32with Base Island layout. The resulting transistor (TO-126)shows exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagramTable 1. Device summa

BD175/177/179Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD175 45 V : BD177 60 V : BD179 80 V VCEO Collector-Emitter Voltage : BD175 45 V

BD179Plastic Medium-PowerNPN Silicon TransistorThis device is designed for use in 5.0 to 10 Watt audio amplifiersand drivers utilizing complementary or quasi complementary circuits.Featureshttp://onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available*POWER TRANSISTORSNPN SILICON80 V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBD176 EPITAXIAL SILICON POWER TRANSISTORS BD175BD178BD177BD180BD179NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD175 BD177 BD179 UNITBD176 BD178 BD180Collector -Emitter Voltage VCE

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

isc Silicon NPN Power Transistor BD179DESCRIPTIONDC Current Gain-: h = 40-250(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to type BD180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 DESCRIPTION With TO-126 package Complement to type BD176/178 /180 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CON