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BD242CG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD242CG

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 115 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO220

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BD242CG Datasheet (PDF)

1.1. bd242cg.pdf Size:140K _update

BD242CG
BD242CG

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY • Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP • Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus)

4.1. bd241b bd241c bd242b bd242c.pdf Size:139K _motorola

BD242CG
BD242CG

Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min.) BD241

4.2. bd241c bd242c.pdf Size:108K _motorola

BD242CG
BD242CG

Order this document MOTOROLA by BD241C/D SEMICONDUCTOR TECHNICAL DATA NPN BD241C* Complementary Silicon Plastic PNP BD242B Power Transistors . . . designed for use in general purpose amplifier and switching applications. BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc *Motorola Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) =

 4.3. bd241c bd242b bd242c.pdf Size:93K _onsemi

BD242CG
BD242CG

BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining V

Otros transistores... MPQ7053 , MPQ7093 , BD135TG , BD159G , BD179G , BD180G , BD241CG , BD242BG , BC558 , BD243CG , BD244BG , BD244CG , BD435G , BD436G , BD437G , BD437TG , BD438G .

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