BD242CG Datasheet, Equivalent, Cross Reference Search
Type Designator: BD242CG
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
BD242CG Transistor Equivalent Substitute - Cross-Reference Search
BD242CG Datasheet (PDF)
bd242cg.pdf
BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)
bd241b bd241c bd242b bd242c.pdf
Order this documentMOTOROLAby BD241B/DSEMICONDUCTOR TECHNICAL DATANPNBD241BComplementary Silicon PlasticBD241C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 AdcBD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 V
bd241c bd242c.pdf
Order this documentMOTOROLAby BD241C/DSEMICONDUCTOR TECHNICAL DATANPNBD241C*Complementary Silicon Plastic PNPBD242BPower Transistors. . . designed for use in general purpose amplifier and switching applications.BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc*Motorola Preferred Device CollectorEmitter Sustaining Voltage
bd241c bd242b bd242c.pdf
BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorswww.onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY High Current Gain - Bandwidth ProductSILICON Compact TO-220 AB Package3 AMP Epoxy Meets UL94 V-0 @ 0.125 in80-100 VOLTS These Devices are Pb-F
bd242 bd242a bd242b bd242c.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD242/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD242; -60V(Min)- BD242ACEO(SUS)-80V(Min)- BD242B; -100V(Min)- BD242CComplement to Type BD241/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
