BD242CG Datasheet. Specs and Replacement
Type Designator: BD242CG 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
BD242CG Substitution
- BJT ⓘ Cross-Reference Search
BD242CG datasheet
BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus) ... See More ⇒
bd241b bd241c bd242b bd242c.pdf ![]()
Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B Collector Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* Collector Emitter Sustaining Voltage VCEO(sus) = 80 V... See More ⇒
BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY High Current Gain - Bandwidth Product SILICON Compact TO-220 AB Package 3 AMP Epoxy Meets UL94 V-0 @ 0.125 in 80-100 VOLTS These Devices are Pb-F... See More ⇒
Detailed specifications: MPQ7053, MPQ7093, BD135TG, BD159G, BD179G, BD180G, BD241CG, BD242BG, 13003, BD243CG, BD244BG, BD244CG, BD435G, BD436G, BD437G, BD437TG, BD438G
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