BD243CG Todos los transistores

Introduzca al menos 3 números o letras

BD243CG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD243CG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar BD243CG

BD243CG Datasheet (PDF)

1.1. bd243cg.pdf Size:137K _update

BD243CG
BD243CG

BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http://onsemi.com Features 6 AMPERE • Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON • Collector Emitter Sustaining Voltage -

4.1. bd243b_bd244b_bd243c_bd244c.pdf Size:140K _motorola

BD243CG
BD243CG

Order this document MOTOROLA by BD243B/D SEMICONDUCTOR TECHNICAL DATA NPN BD243B Complementary Silicon Plastic BD243C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD244B Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage BD244C* VCEO(sus) = 80 Vdc (Min)

4.2. bd243c_bd244c.pdf Size:341K _st

BD243CG
BD243CG

BD243C BD244C Complementary power transistors . Features Complementary NPN-PNP devices Applications Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagram coupled with very low saturation voltage. The

4.3. bd243_bd243a_bd243b_bd243c.pdf Size:38K _fairchild_semi

BD243CG
BD243CG

BD243/A/B/C Medium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD243 45 V : BD243A 60 V : BD243B 80 V : BD243C 100 V VCEO Collector-Emitte

4.4. bd243b_bd243c_bd244b_bd244c.pdf Size:91K _onsemi

BD243CG
BD243CG

BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http://onsemi.com Features 6 AMPERE Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON Co

Otros transistores... MPQ7093 , BD135TG , BD159G , BD179G , BD180G , BD241CG , BD242BG , BD242CG , BC327 , BD244BG , BD244CG , BD435G , BD436G , BD437G , BD437TG , BD438G , BD439G .

 


BD243CG
  BD243CG
  BD243CG
  BD243CG
 
BD243CG
  BD243CG
  BD243CG
  BD243CG
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: PT9790 | PT9734 | PT9732 | PT9731 | PT9730 | PT23T9014 | PT23T9013 | PT23T8550 | PT23T8050 | PT23T5551 | PT23T5401 | PT23T3906 | PT23T3904 | PT23T2907A | PT23T2222A | PT236T30E2M | PT236T30E2H | PT236T30E2 | PQMD12 | PPT8N30E2 |


Introduzca al menos 1 números o letras