BD243CG Datasheet, Equivalent, Cross Reference Search
Type Designator: BD243CG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD243CG Transistor Equivalent Substitute - Cross-Reference Search
BD243CG Datasheet (PDF)
bd243cg.pdf
BD243B, BD243C (NPN)BD244B, BD244C (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general purpose amplifier andswitching applications. http://onsemi.comFeatures6 AMPERE Collector - Emitter Saturation Voltage -POWER TRANSISTORSVCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 AdcCOMPLEMENTARY SILICON Collector Emitter Sustaining Voltage -
bd243b bd244b bd243c bd244c.pdf
Order this documentMOTOROLAby BD243B/DSEMICONDUCTOR TECHNICAL DATANPNBD243BComplementary Silicon PlasticBD243C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD244B Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage BD244C*VCEO(sus) =
bd243c bd244c.pdf
BD243CBD244CComplementary power transistors .Features Complementary NPN-PNP devicesApplications Power linear and switching321DescriptionTO-220The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagramcoupled with very low saturation vo
bd243 bd243a bd243b bd243c.pdf
BD243/A/B/CMedium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD243 45 V: BD243A 60 V: BD243B 80 V: BD243C 100 V VCEO Collector-
bd243b bd243c bd244b bd244c.pdf
BD243B, BD243C (NPN),BD244B, BD244C (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general purpose amplifier andswitching applications. www.onsemi.comFeatures6 AMPERE High Current Gain Bandwidth ProductPOWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*COMPLEMENTARY SILICON80-100 VOLTSMAXIMUM RATINGS65 W
bd243 bd243a bd243b bd243c.pdf
isc Silicon NPN Power Transistor BD243/A/B/CDESCRIPTIONDC Current Gain -h =30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD243; 60V(Min)- BD243ACEO(SUS)80V(Min)- BD243B; 100V(Min)- BD243CComplement to Type BD244/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
