BD244CG Todos los transistores

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BD244CG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD244CG

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO220

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BD244CG Datasheet (PDF)

1.1. bd244cg.pdf Size:137K _update

BD244CG
BD244CG

BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http://onsemi.com Features 6 AMPERE • Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON • Collector Emitter Sustaining Voltage -

4.1. bd243b bd244b bd243c bd244c.pdf Size:140K _motorola

BD244CG
BD244CG

Order this document MOTOROLA by BD243B/D SEMICONDUCTOR TECHNICAL DATA NPN BD243B Complementary Silicon Plastic BD243C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD244B Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage BD244C* VCEO(sus) = 80 Vdc (Min)

4.2. bd243c bd244c.pdf Size:341K _st

BD244CG
BD244CG

BD243C BD244C Complementary power transistors . Features Complementary NPN-PNP devices Applications Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagram coupled with very low saturation voltage. The

 4.3. bd244 bd244a bd244b bd244c.pdf Size:38K _fairchild_semi

BD244CG
BD244CG

BD244/A/B/C Medium Power Linear and Switching Applications Complement to BD243, BD243A, BD243B and BD243C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD244 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V VCEO Collecto

4.4. bd243b bd243c bd244b bd244c.pdf Size:91K _onsemi

BD244CG
BD244CG

BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http://onsemi.com Features 6 AMPERE Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON Co

Otros transistores... BD159G , BD179G , BD180G , BD241CG , BD242BG , BD242CG , BD243CG , BD244BG , A733 , BD435G , BD436G , BD437G , BD437TG , BD438G , BD439G , BD440G , BD441G .

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