BD675AG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD675AG  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO225

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BD675AG datasheet

 ..1. Size:77K  onsemi
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BD675AG

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons http //onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON High DC Current Gain 60, 80, 100 VOLTS, 40 WATT

 8.1. Size:112K  motorola
 bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf pdf_icon

BD675AG

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary general purpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A,

 8.2. Size:39K  fairchild semi
 bd675a bd677a bd679a bd681.pdf pdf_icon

BD675AG

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD675A 45 V BD677A 60 V B

 8.3. Size:189K  inchange semiconductor
 bd675a.pdf pdf_icon

BD675AG

isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION Collector Emitter Breakdown Voltage V = 45 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2 A FE C Complement to Type BD676A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ap

MOSTRAR MÁS

Otros transistores... BD436G, BD437G, BD437TG, BD438G, BD439G, BD440G, BD441G, BD442G, 2SA1837, BD675G, BD676AG, BD676G, BD677AG, BD677G, BD678AG, BD678G, BD679AG