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BD675AG Specs and Replacement


   Type Designator: BD675AG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO225
 

 BD675AG Substitution

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BD675AG detailed specifications

 ..1. Size:77K  onsemi
bd675ag.pdf pdf_icon

BD675AG

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons http //onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON High DC Current Gain 60, 80, 100 VOLTS, 40 WATT... See More ⇒

 8.1. Size:112K  motorola
bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf pdf_icon

BD675AG

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary general purpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, ... See More ⇒

 8.2. Size:39K  fairchild semi
bd675a bd677a bd679a bd681.pdf pdf_icon

BD675AG

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD675A 45 V BD677A 60 V B... See More ⇒

 8.3. Size:189K  inchange semiconductor
bd675a.pdf pdf_icon

BD675AG

isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION Collector Emitter Breakdown Voltage V = 45 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2 A FE C Complement to Type BD676A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ap... See More ⇒

Detailed specifications: BD436G , BD437G , BD437TG , BD438G , BD439G , BD440G , BD441G , BD442G , 2SA1837 , BD675G , BD676AG , BD676G , BD677AG , BD677G , BD678AG , BD678G , BD679AG .

History: MMBTH81LT1

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