All Transistors. BD675AG Datasheet


BD675AG Datasheet, Equivalent, Cross Reference Search

Type Designator: BD675AG

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO225

BD675AG Transistor Equivalent Substitute - Cross-Reference Search


BD675AG Datasheet (PDF)

1.1. bd675ag.pdf Size:77K _update


BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain 60, 80, 100 VOLTS, 40 WATT

4.1. bd675 bd675a bd677 bd677a bd679 bd679a bd681.pdf Size:112K _motorola


Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

4.2. bd675a bd677a bd679a bd681.pdf Size:39K _fairchild_semi


BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80

4.3. bd675a 677a 679a 681.pdf Size:117K _inchange_semiconductor


Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676A/678A/680A/682 Ў¤ DARLINGTON APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ў

4.4. bd675a.pdf Size:121K _inchange_semiconductor


INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD676A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS

Datasheet: BD436G , BD437G , BD437TG , BD438G , BD439G , BD440G , BD441G , BD442G , 9012 , BD675G , BD676AG , BD676G , BD677AG , BD677G , BD678AG , BD678G , BD679AG .





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