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BD676AG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD676AG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO225
     - Selección de transistores por parámetros

 

BD676AG Datasheet (PDF)

 ..1. Size:102K  onsemi
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BD676AG

BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V

 8.1. Size:42K  fairchild semi
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BD676AG

BD676A/678A/680A/682Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V

 8.2. Size:159K  onsemi
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BD676AG

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:189K  inchange semiconductor
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BD676AG

isc Silicon PNP Darlington Power Transistor BD676ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = -45 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE CComplement to Type BD675AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: JC500O | Q-00369C | KT8143M | KSC900G | BF883 | FCS9020H | BC817F

 

 
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