Биполярный транзистор BD676AG
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD676AG
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40
W
Макcимально допустимое напряжение коллектор-база (Ucb): 45
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 4
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора:
TO225
Аналоги (замена) для BD676AG
BD676AG
Datasheet (PDF)
..1. Size:102K onsemi
bd676ag.pdf BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V
8.1. Size:42K fairchild semi
bd676a bd678a bd680a bd682.pdf BD676A/678A/680A/682Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V
8.2. Size:159K onsemi
bd676a bd678a bd680a bd682.pdf Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.3. Size:189K inchange semiconductor
bd676a.pdf isc Silicon PNP Darlington Power Transistor BD676ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = -45 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE CComplement to Type BD675AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier
8.4. Size:118K inchange semiconductor
bd676a bd678a bd680a bd682.pdf Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD676A/678A/680A/682 DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute
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