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BD677AG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD677AG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: TO225

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BD677AG Datasheet (PDF)

1.1. bd677ag.pdf Size:103K _update

BD677AG
BD677AG

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain: 60,

4.1. bd675 bd675a bd677 bd677a bd679 bd679a bd681.pdf Size:112K _motorola

BD677AG
BD677AG

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

4.2. bd677a bd679a bd681 bd678a bd680a bd682.pdf Size:87K _st

BD677AG
BD677AG

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitax

 4.3. bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf Size:41K _st

BD677AG
BD677AG

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 Th

4.4. bd675a bd677a bd679a bd681.pdf Size:39K _fairchild_semi

BD677AG
BD677AG

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80

 4.5. bd677a.pdf Size:121K _inchange_semiconductor

BD677AG
BD677AG

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD678A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(

Otros transistores... BD439G , BD440G , BD441G , BD442G , BD675AG , BD675G , BD676AG , BD676G , 2N3053 , BD677G , BD678AG , BD678G , BD679AG , BD679G , BD680AG , BD680G , BD681A .

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