BD677G Todos los transistores

 

BD677G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD677G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: TO225

Búsqueda de reemplazo de transistor bipolar BD677G

 

BD677G Datasheet (PDF)

1.1. bd677g.pdf Size:103K _update

BD677G
BD677G

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain: 60,

5.1. bd677ag.pdf Size:103K _update

BD677G
BD677G

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain: 60,

5.2. bd675 bd677 bd679 bd681.pdf Size:112K _motorola

BD677G
BD677G

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

 5.3. bd675 bd675a bd677 bd677a bd679 bd679a bd681.pdf Size:112K _motorola

BD677G
BD677G

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

5.4. bd677a bd679a bd681 bd678a bd680a bd682.pdf Size:87K _st

BD677G
BD677G

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitax

 5.5. bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf Size:41K _st

BD677G
BD677G

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 Th

5.6. bd675a bd677a bd679a bd681.pdf Size:39K _fairchild_semi

BD677G
BD677G

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80

5.7. bd675 bd677 bd679 bd681.pdf Size:88K _comset

BD677G
BD677G

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD67

5.8. bd675 bd677 bd679 bd681 bd683.pdf Size:176K _cdil

BD677G
BD677G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base

5.9. bd675 bd677 bd679.pdf Size:118K _inchange_semiconductor

BD677G
BD677G

Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/

5.10. bd677.pdf Size:121K _inchange_semiconductor

BD677G
BD677G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD678 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(

5.11. bd677a.pdf Size:121K _inchange_semiconductor

BD677G
BD677G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD678A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


BD677G
  BD677G
  BD677G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: RD9FE-V | RD9FE-T | RD9FE-R | FJP3305H2 | CHT807PTS | CHT807PTR | CHT807PTQ | 3DA4544Y | 3DA4544O | 3DA4544R | 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E |

 

 

 
Back to Top