All Transistors. BD677G Datasheet

 

BD677G Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD677G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO225

 BD677G Transistor Equivalent Substitute - Cross-Reference Search

   

BD677G Datasheet (PDF)

 ..1. Size:103K  onsemi
bd677g.pdf

BD677G BD677G

BD675, BD675A, BD677,BD677A, BD679, BD679A,BD681BD681 is a Preferred DevicePlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain:60,

 9.1. Size:112K  motorola
bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf

BD677G BD677G

Order this documentMOTOROLAby BD675/DSEMICONDUCTOR TECHNICAL DATABD675BD675APlastic Medium-PowerBD677Silicon NPN DarlingtonsBD677A. . . for use as output devices in complementary generalpurpose amplifier applica-BD679tions. High DC Current Gain BD679AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD681* BD675, 675A, 677, 677A,

 9.2. Size:87K  st
bd677a bd679a bd681 bd678a bd680a bd682.pdf

BD677G BD677G

BD677/A/679/A/681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION LINEAR AND SWITCHING INDUSTRIAL12EQUIPMENT3SOT-32DESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epi

 9.3. Size:41K  st
bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf

BD677G BD677G

BD677/A/679/A681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epitaxial-base NPN powertransistors in monolithic Darlington configurationmounted in Jedec SOT-32 plastic package.They are intended for use in medium power linarand switching applications12

 9.4. Size:39K  fairchild semi
bd675a bd677a bd679a bd681.pdf

BD677G BD677G

BD675A/677A/679A/681Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectivelyTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : B

 9.5. Size:103K  onsemi
bd677ag.pdf

BD677G BD677G

BD675, BD675A, BD677,BD677A, BD679, BD679A,BD681BD681 is a Preferred DevicePlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain:60,

 9.6. Size:88K  comset
bd675 bd677 bd679 bd681.pdf

BD677G BD677G

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORSThe BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitB

 9.7. Size:176K  cdil
bd675 bd677 bd679 bd681 bd683.pdf

BD677G BD677G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675ABD677, BD677ABD679, BD679ABD681, BD683TO126 Plastic PackageECBComplementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITSBD675A 677A 679AVCBOCollector B

 9.8. Size:118K  inchange semiconductor
bd675 bd677 bd679.pdf

BD677G BD677G

Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 DESCRIPTION With TO-126 package Complement to type BD676/678/680 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary generalpurpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

 9.9. Size:189K  inchange semiconductor
bd677a.pdf

BD677G BD677G

isc Silicon NPN Darlington Power Transistor BD677ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60V(BR)CEODC Current Gain: h = 750(Min) @ I = 2 AFE CComplement to Type BD678AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier app

 9.10. Size:117K  inchange semiconductor
bd675a bd677a bd679a bd681.pdf

BD677G BD677G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25

 9.11. Size:188K  inchange semiconductor
bd677.pdf

BD677G BD677G

isc Silicon NPN Darlington Power Transistor BD677DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE CComplement to Type BD678Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier app

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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