BD679AG Datasheet. Equivalente

 ..1. Size:103K  onsemi
 bd679ag.pdf

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium-Power Silicon NPN Darlingtons http //onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON High DC Current Gain 60,

 8.1. Size:112K  motorola
 bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary general purpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A,

 8.2. Size:87K  st
 bd677a bd679a bd681 bd678a bd680a bd682.pdf

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epi

 8.3. Size:41K  st
 bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2

 8.4. Size:39K  fairchild semi
 bd675a bd677a bd679a bd681.pdf

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD675A 45 V BD677A 60 V B

 8.5. Size:232K  cystek
 bd679a.pdf

Spec. No. C652T3-M Issued Date 2006.05.24 CYStech Electronics Corp. Revised Date 2011.09.30 Page No. 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construction

 8.6. Size:117K  inchange semiconductor
 bd675a bd677a bd679a bd681.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25

 8.7. Size:189K  inchange semiconductor
 bd679a.pdf

isc Silicon NPN Darlington Power Transistor BD679A DESCRIPTION Collector Emitter Breakdown Voltage V = 80V (BR)CEO DC Current Gain h = 750(Min) @ I = 2 A FE C Complement to Type BD680A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier app