All Transistors. BD679AG Datasheet

 

BD679AG Datasheet, Equivalent, Cross Reference Search

Type Designator: BD679AG

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO225

BD679AG Transistor Equivalent Substitute - Cross-Reference Search

 

BD679AG Datasheet (PDF)

1.1. bd679ag.pdf Size:103K _update

BD679AG
BD679AG

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain: 60,

4.1. bd675 bd675a bd677 bd677a bd679 bd679a bd681.pdf Size:112K _motorola

BD679AG
BD679AG

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

4.2. bd677a bd679a bd681 bd678a bd680a bd682.pdf Size:87K _st

BD679AG
BD679AG

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitax

 4.3. bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf Size:41K _st

BD679AG
BD679AG

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 Th

4.4. bd675a bd677a bd679a bd681.pdf Size:39K _fairchild_semi

BD679AG
BD679AG

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80

 4.5. bd679a.pdf Size:232K _cystek

BD679AG
BD679AG

Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction

Datasheet: BD675AG , BD675G , BD676AG , BD676G , BD677AG , BD677G , BD678AG , BD678G , 5609 , BD679G , BD680AG , BD680G , BD681A , BD681G , BD682A , BD682G , BD683A .

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