BD810G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD810G  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1.5 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO220

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BD810G datasheet

 ..1. Size:105K  onsemi
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BD810G

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features http //onsemi.com DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc Pb-Free Packages are Available* 10 AMPERE POWER TRANSISTORS 80 VOLTS MAXIMUM RATINGS 90 WATTS Rating Symbol Value U

 9.1. Size:104K  motorola
 bd808 bd810.pdf pdf_icon

BD810G

Order this document MOTOROLA by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon *Motorola Preferred Device PNP Transistor 10 AMPERE . . . designed for use in high power audio amplifiers utilizing complementary or quasi POWER TRANSISTORS complementary circuits. PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc

 9.2. Size:224K  onsemi
 bd809 bd810.pdf pdf_icon

BD810G

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. www.onsemi.com Features 10 AMPERE High DC Current Gain POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* 80 VOLTS 90 WATTS MAXIMUM RATINGS PNP NPN Rating Symbol Value Un

 9.3. Size:121K  jmnic
 bd810.pdf pdf_icon

BD810G

Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features B C E Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.

MOSTRAR MÁS

Otros transistores... BD682A, BD682G, BD683A, BD684A, BD772-GR, BD772-O, BD772-R, BD772-Y, 13005, BD882-GR, BD882-O, BD882-R, BD882-Y, BDS10IG, BDS10N1A, BDS10N1B, BDS10SMD