BD810G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD809 (NPN), BD810 (PNP)Plastic High PowerSilicon TransistorThese devices are designed for use in high power audio amplifiersutilizing complementary or quasi complementary circuits.Features http://onsemi.com DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc Pb-Free Packages are Available*10 AMPEREPOWER TRANSISTORS80 VOLTSMAXIMUM RATINGS90 WATTSRating Symbol Value U

Order this documentMOTOROLAby BD808/DSEMICONDUCTOR TECHNICAL DATABD808BD810*Plastic High Power Silicon*Motorola Preferred DevicePNP Transistor10 AMPERE. . . designed for use in high power audio amplifiers utilizing complementary or quasiPOWER TRANSISTORScomplementary circuits.PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc

BD809 (NPN),BD810 (PNP)Plastic High PowerSilicon TransistorsThese devices are designed for use in high power audio amplifiersutilizing complementary or quasi complementary circuits. www.onsemi.comFeatures10 AMPERE High DC Current GainPOWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*80 VOLTS90 WATTSMAXIMUM RATINGSPNP NPNRating Symbol Value Un

Power Transistors www.jmnic.comBD810 Silicon PNP Transistors Features B C E Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.

isc Silicon PNP Power Transistor BD810DESCRIPTIONDC Current Gain -: h =30@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type BD809Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circ