All Transistors. BD810G Datasheet

 

BD810G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD810G

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

BD810G Transistor Equivalent Substitute - Cross-Reference Search

 

BD810G Datasheet (PDF)

1.1. bd810g.pdf Size:105K _update

BD810G
BD810G

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features http://onsemi.com • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc • Pb-Free Packages are Available* 10 AMPERE POWER TRANSISTORS 80 VOLTS MAXIMUM RATINGS 90 WATTS Rating Symbol Value U

5.1. bd808 bd810.pdf Size:104K _motorola

BD810G
BD810G

Order this document MOTOROLA by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon *Motorola Preferred Device PNP Transistor 10 AMPERE . . . designed for use in high power audio amplifiers utilizing complementary or quasi POWER TRANSISTORS complementary circuits. PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc IIIIIIIIIIIIIIIIIIIIIII 60, 80 V

5.2. bd809 bd810.pdf Size:80K _onsemi

BD810G
BD810G

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features http://onsemi.com DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc Pb-Free Packages are Available* 10 AMPERE POWER TRANSISTORS 80 VOLTS MAXIMUM RATINGS 90 WATTS Rating Symbol Value Unit Co

5.3. bd810.pdf Size:121K _jmnic

BD810G

Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features B C E ?Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ?With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.0 V I

5.4. bd810.pdf Size:118K _inchange_semiconductor

BD810G
BD810G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD809 Ў¤ DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS Ў¤ Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting bas

Datasheet: BD682A , BD682G , BD683A , BD684A , BD772-GR , BD772-O , BD772-R , BD772-Y , 2SC2625 , BD882-GR , BD882-O , BD882-R , BD882-Y , BDS10IG , BDS10N1A , BDS10N1B , BDS10SMD .

 


BD810G
  BD810G
  BD810G
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |