BDS10N1B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDS10N1B  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 43.75 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO276AA

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BDS10N1B datasheet

 ..1. Size:360K  semelab
 bds10n1b.pdf pdf_icon

BDS10N1B

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 60V VCEO Collector Emitte

 7.1. Size:360K  semelab
 bds10n1a.pdf pdf_icon

BDS10N1B

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 60V VCEO Collector Emitte

 9.1. Size:14K  semelab
 bds10ig.pdf pdf_icon

BDS10N1B

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

 9.2. Size:41K  semelab
 bds10smd.pdf pdf_icon

BDS10N1B

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

MOSTRAR MÁS

Otros transistores... BD772-Y, BD810G, BD882-GR, BD882-O, BD882-R, BD882-Y, BDS10IG, BDS10N1A, 2SD669A, BDS10SMD, BDS10SMD05, BDS11IG, BDS11SM, BDS11SMD, BDS11SMD05, BDS12IG, BDS12M2A