All Transistors. BDS10N1B Datasheet

 

BDS10N1B Datasheet, Equivalent, Cross Reference Search

Type Designator: BDS10N1B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 43.75 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO276AA

BDS10N1B Transistor Equivalent Substitute - Cross-Reference Search

 

BDS10N1B Datasheet (PDF)

1.1. bds10n1b.pdf Size:360K _update

BDS10N1B
BDS10N1B

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitte

3.1. bds10n1a.pdf Size:360K _update

BDS10N1B
BDS10N1B

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitte

5.1. bds10smd05.pdf Size:41K _update

BDS10N1B
BDS10N1B

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1 2 3 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVEL

5.2. bds10smd.pdf Size:41K _update

BDS10N1B
BDS10N1B

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1 2 3 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVEL

5.3. bds10ig.pdf Size:14K _update

BDS10N1B
BDS10N1B

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 • HERMETIC TO257 ISOLATED METAL PACKAGES • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

Datasheet: BD772-Y , BD810G , BD882-GR , BD882-O , BD882-R , BD882-Y , BDS10IG , BDS10N1A , C103 , BDS10SMD , BDS10SMD05 , BDS11IG , BDS11SM , BDS11SMD , BDS11SMD05 , BDS12IG , BDS12M2A .

 


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