BDS11IG Todos los transistores

 

BDS11IG Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDS11IG
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO254AA SOT227
 

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BDS11IG datasheet

 ..1. Size:14K  semelab
 bds11ig.pdf pdf_icon

BDS11IG

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

 9.1. Size:41K  semelab
 bds11smd.pdf pdf_icon

BDS11IG

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 9.2. Size:41K  semelab
 bds11smd05.pdf pdf_icon

BDS11IG

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 9.3. Size:16K  semelab
 bds11sm.pdf pdf_icon

BDS11IG

BDS10 BDS10SM BDS11 BDS11SM SEME BDS12 BDS12SM LAB MECHANICAL DATA SILICON NPN Dimensions in mm EPITAXIAL BASE IN 4.6 10.6 0.8 TO220 METAL AND CERAMIC SURFACE MOUNT 3.6 Dia. PACKAGES 1 2 3 FEATURES HERMETIC TO220 METAL OR CERAMIC PACKAGES 1.0 HIGH RELIABILITY 2.54 2. 70 MILITARY AND SPACE OPTIONS BSC BSC SCREENING TO CECC LEVELS 11.5 2.0 0.25 FU

MOSTRAR MÁS

Otros transistores... BD882-O , BD882-R , BD882-Y , BDS10IG , BDS10N1A , BDS10N1B , BDS10SMD , BDS10SMD05 , 2SC2240 , BDS11SM , BDS11SMD , BDS11SMD05 , BDS12IG , BDS12M2A , BDS12N1A , BDS12N1B , BDS12SMD .

 

 
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