BDS11SM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDS11SM  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO276AB

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BDS11SM datasheet

 ..1. Size:16K  semelab
 bds11sm.pdf pdf_icon

BDS11SM

BDS10 BDS10SM BDS11 BDS11SM SEME BDS12 BDS12SM LAB MECHANICAL DATA SILICON NPN Dimensions in mm EPITAXIAL BASE IN 4.6 10.6 0.8 TO220 METAL AND CERAMIC SURFACE MOUNT 3.6 Dia. PACKAGES 1 2 3 FEATURES HERMETIC TO220 METAL OR CERAMIC PACKAGES 1.0 HIGH RELIABILITY 2.54 2. 70 MILITARY AND SPACE OPTIONS BSC BSC SCREENING TO CECC LEVELS 11.5 2.0 0.25 FU

 0.1. Size:41K  semelab
 bds11smd.pdf pdf_icon

BDS11SM

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 0.2. Size:41K  semelab
 bds11smd05.pdf pdf_icon

BDS11SM

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 9.1. Size:14K  semelab
 bds11ig.pdf pdf_icon

BDS11SM

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

MOSTRAR MÁS

Otros transistores... BD882-R, BD882-Y, BDS10IG, BDS10N1A, BDS10N1B, BDS10SMD, BDS10SMD05, BDS11IG, 2SA1015, BDS11SMD, BDS11SMD05, BDS12IG, BDS12M2A, BDS12N1A, BDS12N1B, BDS12SMD, BDS12SMD05