BDS13SMD05 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDS13SMD05  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 43.75 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO276AA

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BDS13SMD05 datasheet

 ..1. Size:38K  semelab
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BDS13SMD05

BDS13 BDS13SMD BDS13SMD05 BDS14 BDS14SMD BDS14SMD05 BDS15 BDS15SMD BDS15SMD05 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 4.6 10.6 0.8 FEATURES 3.6 HERMETIC METAL OR CERAMIC PACKAGES Dia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

 6.1. Size:38K  semelab
 bds13smd.pdf pdf_icon

BDS13SMD05

BDS13 BDS13SMD BDS13SMD05 BDS14 BDS14SMD BDS14SMD05 BDS15 BDS15SMD BDS15SMD05 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 4.6 10.6 0.8 FEATURES 3.6 HERMETIC METAL OR CERAMIC PACKAGES Dia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

Otros transistores... BDS11SMD05, BDS12IG, BDS12M2A, BDS12N1A, BDS12N1B, BDS12SMD, BDS12SMD05, BDS13SMD, 431, BDS14SMD, BDS14SMD05, BDS15SMD, BDS15SMD05, BDS16SMD, BDS16SMD05, BDS16X, BDS16XSMD