BDS13SMD05 Todos los transistores

 

BDS13SMD05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDS13SMD05
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 43.75 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO276AA
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BDS13SMD05 Datasheet (PDF)

 ..1. Size:38K  semelab
 bds13smd05.pdf pdf_icon

BDS13SMD05

BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

 6.1. Size:38K  semelab
 bds13smd.pdf pdf_icon

BDS13SMD05

BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ZTX502K | NSVMUN5131T1G | BFN21 | D33J24 | 2SC2265 | 2SC458C | KT8121A-2

 

 
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