BDX14A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDX14A  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 29 W

Tensión colector-base (Vcb): 90 V

Tensión colector-emisor (Vce): 55 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO213AA

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BDX14A datasheet

 ..1. Size:14K  semelab
 bdx14a.pdf pdf_icon

BDX14A

BDX14AA MECHANICAL DATA PNP Dimensions in mm SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES LF Large Signal Power Amplification Medium Current Switching 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. Pin 1 Base Pin 2 Emitter Case - Collector

 ..2. Size:211K  inchange semiconductor
 bdx14a.pdf pdf_icon

BDX14A

isc Silicon PNP Power Transistor BDX14A DESCRIPTION Continuous Collector Current-I = -4A C Collector-Emitter Sustaining Voltage- V = -55V(Min.) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF Large Signal Power Amplification and Medium Current Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.1. Size:10K  semelab
 bdx14s.pdf pdf_icon

BDX14A

BDX14S Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

 9.2. Size:211K  inchange semiconductor
 bdx14.pdf pdf_icon

BDX14A

isc Silicon PNP Power Transistor BDX14 DESCRIPTION Continuous Collector Current-I = -4A C Collector-Emitter Sustaining Voltage- V = -55V(Min.) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

MOSTRAR MÁS

Otros transistores... BDS29CSMD, BDV64BG, BDV65BG, BDW24B, BDW42G, BDW46G, BDW47G, BDW52B, 2SD718, BDX14S, BDX16A, BDX18A, BDX33BG, BDX33CG, BDX34BG, BDX34CG, BDX53BG