BDX54CG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDX54CG  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO220

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BDX54CG datasheet

 ..1. Size:148K  onsemi
 bdx54cg.pdf pdf_icon

BDX54CG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -

 ..2. Size:355K  onsemi
 bdx53bg bdx53cg bdx54bg bdx54cg.pdf pdf_icon

BDX54CG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

 8.1. Size:73K  st
 bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54CG

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t

 8.2. Size:355K  onsemi
 bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54CG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

MOSTRAR MÁS

Otros transistores... BDX18A, BDX33BG, BDX33CG, BDX34BG, BDX34CG, BDX53BG, BDX53CG, BDX54BG, BD335, BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A, BDY58S, BDY60-02, BDY71X