BDX54CG
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX54CG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 200
pF
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BDX54CG
BDX54CG
Datasheet (PDF)
..1. Size:148K onsemi
bdx54cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -
..2. Size:355K onsemi
bdx53bg bdx53cg bdx54bg bdx54cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
8.1. Size:73K st
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t
8.2. Size:355K onsemi
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
8.3. Size:215K inchange semiconductor
bdx54c.pdf
isc Silicon PNP Darlington Power Transistor BDX54CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.0 V (Max) @ I = -3.0 ACE(sat) CComplement to Type BDX53CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
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