BDX54CG datasheet, аналоги, основные параметры

Наименование производителя: BDX54CG  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 200 pf

Статический коэффициент передачи тока (hFE): 750

Корпус транзистора: TO220

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BDX54CG даташит

 ..1. Size:148K  onsemi
 bdx54cg.pdf pdf_icon

BDX54CG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -

 ..2. Size:355K  onsemi
 bdx53bg bdx53cg bdx54bg bdx54cg.pdf pdf_icon

BDX54CG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

 8.1. Size:73K  st
 bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54CG

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t

 8.2. Size:355K  onsemi
 bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54CG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BDX18A, BDX33BG, BDX33CG, BDX34BG, BDX34CG, BDX53BG, BDX53CG, BDX54BG, BD335, BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A, BDY58S, BDY60-02, BDY71X