BDY71X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDY71X  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 29 W

Tensión colector-base (Vcb): 90 V

Tensión colector-emisor (Vce): 55 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO213AA

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BDY71X datasheet

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 bdy71x.pdf pdf_icon

BDY71X

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X High Power Hermetic TO-66 Metal Package Ideally suited for Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 90V VCEO Collector Emitter Voltage 55V VCEX Collector Emitter Voltage VBE = -1.5

 ..2. Size:210K  inchange semiconductor
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BDY71X

isc Silicon NPN Power Transistor BDY71X DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications ABSOLUTE MAXIMUM RATINGS(T =2

 9.1. Size:210K  inchange semiconductor
 bdy71.pdf pdf_icon

BDY71X

isc Silicon NPN Power Transistor BDY71 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

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