BDY71X Datasheet. Specs and Replacement

Type Designator: BDY71X  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 29 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO213AA

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BDY71X datasheet

 ..1. Size:79K  semelab

 bdy71x.pdf pdf_icon

BDY71X

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X High Power Hermetic TO-66 Metal Package Ideally suited for Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 90V VCEO Collector Emitter Voltage 55V VCEX Collector Emitter Voltage VBE = -1.5... See More ⇒

 ..2. Size:210K  inchange semiconductor

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BDY71X

isc Silicon NPN Power Transistor BDY71X DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

 9.1. Size:210K  inchange semiconductor

 bdy71.pdf pdf_icon

BDY71X

isc Silicon NPN Power Transistor BDY71 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒

Detailed specifications: BDX54CG, BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A, BDY58S, BDY60-02, BC558, BDY76E, BDY90S, BFU520, BFU520A, BFU520W, BFU520X, BFU520XR, BFU520Y

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