BFU530A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFU530A
Código: HY*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 24 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 11000 MHz
Capacitancia de salida (Cc): 0.67 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BFU530A
BFU530A Datasheet (PDF)
bfu530a.pdf

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bfu530x.pdf

BFU530XNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
bfu530xr.pdf

BFU530XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
bfu530.pdf

BFU530NPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
Otros transistores... BDY90S , BFU520 , BFU520A , BFU520W , BFU520X , BFU520XR , BFU520Y , BFU530 , 13005 , BFU530W , BFU530X , BFU530XR , BFU550 , BFU550A , BFU550W , BFU550X , BFU550XR .



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