BFX34SMD05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFX34SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herme

BFX34SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX34NPN switching transistor1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BFX34FEATURES PINNING High current (max. 2 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS

BFX34SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers

BFX34SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers inverters.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR BFX34TO-39NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 120 VCollector -Emitte