BR3DD13007V8F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BR3DD13007V8F  📄📄 

Código: BR13007

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220F

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BR3DD13007V8F datasheet

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BR3DD13007V8F

 3.1. Size:456K  blue-rocket-elect
 br3dd13007v9p.pdf pdf_icon

BR3DD13007V8F

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

 4.1. Size:447K  blue-rocket-elect
 br3dd13007x9p.pdf pdf_icon

BR3DD13007V8F

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

 4.2. Size:506K  blue-rocket-elect
 br3dd13007hv7r.pdf pdf_icon

BR3DD13007V8F

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MOSTRAR MÁS

Otros transistores... BR3DD13002E1K, BR3DD13003VK1K, BR3DD13003VK7R, BR3DD13005LP7R, BR3DD13005P7R, BR3DD13005P8F, BR3DD13005T8F, BR3DD13007HV7R, 2N3904, BR3DD13007V9P, BR3DD13007X7R, BR3DD13007X8F, BR3DD13007X9P, BR3DD13009X7R, BR3DD13009X8F, BR3DD13009X9P, BR3DD13009Z8F