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BSP19AT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSP19AT1G

Código: SP19A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 70 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: SOT223

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BSP19AT1G Datasheet (PDF)

1.1. bsp19at1g.pdf Size:100K _update

BSP19AT1G
BSP19AT1G

BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http://onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE • High Voltage TRA

1.2. nsvbsp19at1g.pdf Size:100K _onsemi

BSP19AT1G
BSP19AT1G

BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http://onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE • High Voltage TRA

 2.1. bsp19at1.pdf Size:181K _onsemi

BSP19AT1G
BSP19AT1G

BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for http://onsemi.com medium power surface mount applications. Features SOT--223 PACKAGE ? High Voltage: V(BR)CEO of 250 and 350 V NPN SILICON HIGH VOLT

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