BSS64LT1G Todos los transistores

 

BSS64LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS64LT1G
   Código: AM
   Material: SI
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 60 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT23
 

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BSS64LT1G datasheet

 ..1. Size:69K  onsemi
bss64lt1g.pdf pdf_icon

BSS64LT1G

BSS64LT1G Driver Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc 2 EMITTER Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 100 mAdc 3 THERMAL CHARAC

 6.1. Size:77K  motorola
bss64lt1.pdf pdf_icon

BSS64LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS64LT1/D Driver Transistor BSS64LT1 COLLECTOR NPN Silicon 3 1 BASE 2 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 80 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 120 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Contin

 9.1. Size:47K  philips
bss64 4.pdf pdf_icon

BSS64LT1G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSS64 NPN high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector Hig

 9.2. Size:62K  fairchild semi
bss64.pdf pdf_icon

BSS64LT1G

BSS64 C E SOT-23 B Mark U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Col

Otros transistores... BSS50A , BSS51A , BSS52A , BSS60A , BSS61A , BSS62A , BSS63LT1G , BSS63R , BD135 , BSS71CSM , BSS71DCSM , BSS73CSM , BSS73DCSM , BSS74CSM , 2SA1013-O , 2SA1013-R , 2SA1013-Y .

 

 

 


 
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