BSS71CSM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS71CSM  📄📄 

Material: SI

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-emisor (Vce): 200 V

Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: LCC1

  📄📄 Copiar 

 Búsqueda de reemplazo de BSS71CSM

- Selecciónⓘ de transistores por parámetros

 

BSS71CSM datasheet

 ..1. Size:10K  semelab
 bss71csm.pdf pdf_icon

BSS71CSM

BSS71CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 200V A = (0.04 0.004

 9.1. Size:112K  motorola
 bss71rev1.pdf pdf_icon

BSS71CSM

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS71/D High Voltage Transistors NPN Silicon COLLECTOR BSS71 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Collector Emitter Voltage VCEO 200 Vdc Collector Base Voltage VCBO 200 Vdc Emitter Base Voltage VEBO 6.0 Vdc CASE 22 03, STYLE 1 Collector Current Continuous IC 0.5 Adc TO 1

 9.2. Size:11K  semelab
 bss71dcsm.pdf pdf_icon

BSS71CSM

BSS71DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 200V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.0

Otros transistores... BSS51A, BSS52A, BSS60A, BSS61A, BSS62A, BSS63LT1G, BSS63R, BSS64LT1G, 2SC2625, BSS71DCSM, BSS73CSM, BSS73DCSM, BSS74CSM, 2SA1013-O, 2SA1013-R, 2SA1013-Y, 2SA1015-GR