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BSS71DCSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS71DCSM
   Material: SI
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-emisor (Vce): 200 V
   Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: LCC2
 

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BSS71DCSM Datasheet (PDF)

 ..1. Size:11K  semelab
 bss71dcsm.pdf pdf_icon

BSS71DCSM

BSS71DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 200V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.0

 9.1. Size:112K  motorola
 bss71rev1.pdf pdf_icon

BSS71DCSM

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS71/DHigh Voltage TransistorsNPN SiliconCOLLECTORBSS7132BASE1EMITTERMAXIMUM RATINGSRating Symbol Value Unit321CollectorEmitter Voltage VCEO 200 VdcCollectorBase Voltage VCBO 200 VdcEmitterBase Voltage VEBO 6.0 VdcCASE 2203, STYLE 1Collector Current Continuous IC 0.5 Adc TO1

 9.2. Size:10K  semelab
 bss71csm.pdf pdf_icon

BSS71DCSM

BSS71CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 200V A =(0.04 0.004

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DD21 | KT218D9

 

 
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